elektronische bauelemente SSU04N65 4a , 650v , r ds(on) 2.6 ? n-ch enhancement mode power mosfet 17-jun-2013 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. to-263 4n65 ???? ? rohs compliant product a suffix of ?-c? specifies halogen free description the SSU04N65 is the highest performance trench n-ch mosfets with extreme high cell density , which provide excellent r ds(on) and gate charge for most of the synchronous buck converter applications . features ? advanced high cell density trench technology ? super low gate charge ? excellent cdv/dt effect decline ? 100% eas guaranteed ? green device available marking package information package mpq leader size to-263 0.8k 13 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 650 v gate-source voltage v gs 30 v t c =25c 4 a continuous drain current @v gs =10v 1 t c =100c i d 2.6 a pulsed drain current 2 i dm 8 a t c =25c 112 total power dissipation 4 t a =25c p d 2 w single pulse avalanche energy 3 e as 2.36 mj single pulse avalanche current i as 2 a operating junction and st orage temperature range t j , t stg -55~150 c thermal resistance rating maximum thermal resistance junction-ambient (pcb mount) 1 r ja 62 c / w maximum thermal resistance junction-case 1 r jc 1.12 c / w ? ? gate ? ? source ? ? drain date code ? ? ? ? ? ? millimete r millimete r ref. min. max. ref. min. max. a 4.00 4.85 c2 1.10 1.45 b 0.68 1.00 b2 1.34 ref l4 0.00 0.30 d 8.0 9.15 c 0.36 0.53 e 2.54 ref l3 1.50 ref l ? 14.6 15.85 l1 2.29 2.79 l2 1.27 ref e 9.60 10.45
elektronische bauelemente SSU04N65 4a , 650v , r ds(on) 2.6 ? n-ch enhancement mode power mosfet 17-jun-2013 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t j = 25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 650 - - v v gs =0, i d = 250 a gate-threshold voltage v gs(th) 2 - 5 v v ds =v gs , i d =250 a forward transconductance g fs - 3 - s v ds =15v, i d =2a gate-source leakage current i gss - - 100 na v gs = 30v drain-source leakage current i dss - - 2 a v ds =520v, v gs =0 static drain-source on-resistance 2 r ds(on) - 2.1 2.6 ? v gs =10v, i d =2a gate resistance r g - 3.4 6.8 ? v ds =v gs =0, f=1mhz total gate charge(10v) q g - 18 - gate-source charge q gs - 4.9 - gate-drain (?miller?) change q gd - 6.1 - nc i d =1a v ds =520v v gs =10v turn-on delay time t d(on) - 11.2 - rise time t r - 18.8 - turn-off delay time t d(off) - 29.2 - fall time t f - 29.2 - ns v dd =300v i d =1a v gs =10v r g =10 ? input capacitance c iss - 775 - output capacitance c oss - 56 - reverse transfer capacitance c rss - 3.8 - pf v gs =0 v ds =25v f =1.0mhz guaranteed avalanche characteristics single pulse avalanche energy 5 eas 0.6 - - mj v dd =100v,l=1mh , i as =1a source-drain diode diode forward voltage 2 v sd - - 1 v i s =1a, v gs =0 reverse recovery time t rr - 195 - ns reverse recovery charge q rr - 580 - nc i f =1a,t j =25c, dl/dt=100a/ s continuous source current 1,6 i s - - 4 a pulsed source current 2,6 i sm - - 8 a v d =v g =0, force current notes: 1. the data tested by surface mounted on a 1 inch2 fr-4 board with 2 oz copper. 2. the data tested by pulsed , pulse width Q 300 s , duty cycle Q 2% 3. the eas data shows max. rating . the test condition is v dd =100v,v gs =10v,l=1mh,i as =2a 4. the power dissipation is limited by 150c, junction temperature 5. the min. value is 100% eas tested guarantee. 6. the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation.
elektronische bauelemente SSU04N65 4a , 650v , r ds(on) 2.6 ? n-ch enhancement mode power mosfet 17-jun-2013 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
elektronische bauelemente SSU04N65 4a , 650v , r ds(on) 2.6 ? n-ch enhancement mode power mosfet 17-jun-2013 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
|
